Plenary Talks

Dr. Peter Ramm is head of the Silicon Technology and Vertical System Integration department of Fraunhofer EMFT (formerly IZM-M) in Munich, Germany, where he is responsible for process integration of innovative devices and heterogeneous systems with a specific focus on 3D integration technologies.

Peter Ramm received the physics and Dr. Rer. Nat. degrees from the University of Regensburg and subsequently worked for Siemens in the DRAM facility where he was responsible for the process integration. In 1988 he joined Fraunhofer IFT in Munich, focusing since more than two decades on 3D integration technologies.

He is author or co-author of more than 100 publications, including three book chapters and 23 patents. Peter Ramm is co-editor of four peer reviewed proceedings books (Materials Research Society and Electrochemical Society) and of Wiley´s “Handbook of 3D Integration”.

He received the “William D. Ashman Achievement Award 2009” from the International Microelectronics and Packaging Society (IMAPS) “for pioneering work on 3D IC stacking and integration”.

Prof. Dr.-Ing. Yiannos Manoli, University of Freiburg - IMTEK and HSG-IMT.

Dr. Yiannos Manoli holds the Fritz Huettinger Chair of Microelectronics at the Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany. He additionally serves as director of the applied research “Institute of Micromachining and Information Technology” of the “Hahn-Schickard Gesellschaft” (HSG-IMIT).

His research interests are the design of low-voltage and low-power mixed-signal systems with over 300 papers published in these areas. The emphasis lies in Analog-to-Digital converters as well as in energy harvesting and sensor read-out CMOS circuits. Additional research activities concentrate on motion and vibration energy transducers and on inertial sensors.

Prof. Manoli received the Best Teaching Award of the Technical Faculty and Best Paper Awards from ESSCIRC 1988, PowerMEMS 2006, MWSCAS 2007 and MSE 2007. Spicy VOLTsim, a web-based animation and visualization of analog circuits, received the Multi-Media-Award of the University of Freiburg in 2005 (www.imtek.de/svs).

He holds a B.A. degree (summa cum laude) in Physics and Mathematics, a M.S. degree in Electrical Engineering and Computer Science from the University of California, Berkeley and the Dr.-Ing. Degree in Electrical Engineering from the Gerhard Mercator University in Duisburg, Germany.

Dr. Martin Zander is Director and Head of Portfolio Management at ST-Ericsson.

He has been working in the Telecom Industry since 1999 in strategic product management as well as sales & marketing with mobile phones, mobile platforms, and multimedia service layer products.

Between 2003 and 2006, he was responsible for setting up and managing Ericsson Mobile Platforms product marketing activities in Japan. After returning to Europe, Mr. Zander joined Ericsson Multimedia division where he managed their service layer and multimedia portfolio and thereafter he joined ST-Ericsson in 2009.

Dr. Carlos Mazure, Chief Technology Officer, Executive Vice President of Soitec Group is involved in defining Soitec's technology strategy and leads advanced technology alliances with customers and academia. He focuses on assessing the device-substrate system, in the understanding of the advantages that SOI and engineered substrates bring to the device architecture, and in the development of innovative SOI based circuit solutions. He works closely with R&D, Business Units, Business Development, Sales and customers to help support existing technology programs and open new applications. He joined Soitec in 2001 to create the R&D organization, which he directed until 2009.

Prior to joining Soitec, Dr. Mazure worked for Infineon Technologies in Munich, Germany, where he headed the ferroelectric FeRAM development program. Later, as Director of Business Development at Infineon he initiated the Infineon–Toshiba FeRAM Development Alliance. Before moving to Germany, he worked for the IBM/Infineon DRAM Development Alliance in East Fishkill, New York. His experience also includes work on SOI, BiCMOS high performance SRAM and technology development at APRDL, Motorola Semiconductor in Austin, Texas.

Mazure holds two doctorates in physics, one from the Grenoble University, France, and the other from the Technical University of Munich, Germany. He has authored or co-authored more than 150 technical papers and holds more than 90 patents worldwide. He is a member of the Semiconductor Advisory Board of Virginia Tech, member of several international technology and advisory committees, IEEE senior member and a regular invited speaker at international conferences and workshops.

Dr. René Penning de Vries is Senior Vice President and Chief Technology Officer of NXP Semiconductors BV.

René is responsible for the product creation processes at NXP, focusing on the key areas of Innovation, Technology and Research.

René previously held the position of CTO at Philips Semiconductors prior to the formation of NXP in 2006. He started working for Philips Research in 1984. His career evolved from various technical and managerial roles in CMOS development, into management of platform and design technology as well IP creation. Later, system technology and research were added to his portfolio.

During his career, René worked and lived in the US, France and in Singapore, where he was VP of Technology in SSMC.

Dr. Hans Rijns is Vice President and head of Research at NXP, the independent semiconductor company fonded by Philips. Hans is responsible for all applications, systems, circuits and process technology research programs at NXP. In this role, he is part of the NXP Corporate Innovation and Technology management team headed by Rene Penning de Vries.

He started his professional career in 1991 at Philips Research as scientist in the area of discrete-time mixed-signal circuits. In 1996 he moved to Philips Semiconductors and held various technical and business management positions mainly in the field of baseband and multimedia products for the wireless market. Since 2006, he proceeded to executive management positions in NXP Research. Hans holds an M.Sc. and Ph.D in Electrical Engineering from the University of Twente, the Netherlands. He has over 20 scientific publications and holds 6 patents.

Dr. Wentai Liu received BS from National Chiao-Tung University (Taiwan), MS from National Taiwan University, and PhD from the University of Michigan.

In 1983, he joined North Carolina State University, where he held the Alcoa Chair Professorship in ECE and was the founder of the Analog/Mixed-Mode Design Consortium. Since 2003, he has been a professor at the University of California, Santa Cruz, where he is also the Campus Director and Thrust Leader of the NSF Engineering Research Center on Biomimetic Microelectronic Systems.

His research interests include neuro-engineering, neural prosthesis, brain-machine interface, bioelectronics, transceiver, sensors and actuators, timing/clock optimization, vision/image processing. He has been working on the neural implants dealing with nerves and muscles for retina, epilepsy, muscle, eyelids, spinal cord, and bladder. Since its inception, he has been leading the engineering efforts of the retinal prosthesis to restore vision, finally leading to successful implant trials in blind patients.

He has published more than 300 technical papers and two books. He received RD-100 Award, two IEEE Outstanding Paper Awards, Alcoa Foundation’s Distinguished Engineering Research Award, NASA Group Achievement Award, and Outstanding Alumni Award from National Chiao-Tung University, where he also holds a Chair Professorship as the Founder and Honorary Director of Biomimetic Systems Research Center. He has served as Associate Editor for IEEE Trans. on Biomedical Engineering, Guest Editor for both IEEE Proceedings Special Issue of Biomimetic Systems and IEEE-MTT Special Issue of Wireless IC for Biomedical Applications.

He is the founder of the International Conference on Neuroprosthetic Devices, which has been held twice in 2009 and 2010.

Dr. Ullrich R. Pfeiffer received the diploma degree in physics and the Ph.D. in physics from the University of Heidelberg, Germany, in 1996 and 1999 respectively.

In 1997 he worked as a research fellow at the Rutherford Appleton Laboratory, Oxfordshire England. In 2000 his research was on real-time electronics for a LHC-Experiment at the European Organization for Nuclear Research (CERN), Switzerland. From 2001 to 2006 he was with the IBM T.J. Watson Research Center where his research involved RF circuit design, power amplifier design at 60GHz and 77GHz, high-frequency modeling and packaging for mmWave communication systems. In 2007 he received an European Young Investigator Award and lead the THz electronics group at the Institute of High-Frequency and Quantum Electronics at the University of Siegen, Germany. Since 2008 he holds the High-frequency and Communication Technology chair at the University of Wuppertal, Germany.

Dr. Pfeiffer was the co-recipient of the 2004 and 2006 Lewis Winner Award for Outstanding Paper at the IEEE International Solid-State Circuit Conference, the co-recipient of the 2006 IBM Pat Goldberg Memorial Best Paper Award, the 2008 EuMIC Best Paper Award, and the 2009 Best RFIC Oral Paper Award.

Dr. Ian Young received the BSEE and the M. Eng. Science from the University of Melbourne, Australia. He received the Ph.D in Electrical Engineering from the University of California, Berkeley.

He joined Intel Corporation in 1983 where he is a Senior Fellow in the Technology and Manufacturing Group.

His technical contributions at Intel have been in the design of DRAMs, SRAMs, microprocessor circuit design, Phase Locked Loops for microprocessor clocking, mixed-signal circuits for microprocessor high speed I/O links, and RF CMOS circuits for wireless. He has also contributed to the definition and development of Intel’s process technologies.

Until recently he was directing the research and development of analog mixed signal and RF circuits in 32nm and 22nm logic processes. He now leads a research group exploring the future directions for the integrated circuit in the post CMOS era.

He was a member of the Symposium on VLSI Circuits Technical Program Committee from 1991 to 98 serving as the Symposium Chairman in 1998. He was a member of the ISSCC Technical Program Committee from 1992 to 2005 and Chair of the Technical Program Committee in 2005. He currently serves on the Solid-State Circuits Society Adcom.

Young is a Fellow of the IEEE.

Dr. David Ruffieux received the MS and PhD degrees in micro-engineering from the Swiss Federal Institute of Technology (EPFL) and University of Neuchâtel, Switzerland in 1995 and 2000 respectively.

In 1995, he was hired by the Swiss Center for Electronics and Microtechnology (CSEM), where he worked in the fields of MEMS and IC design. In 2000, he joined the RF and Analog IC design group of CSEM where he is involved in analog and RF low power, low voltage circuit design. He is now leading research activities in the fields of MEMS-based wireless transceivers and low power RTC based on silicon MEMS resonators.

Dr. Ruffieux has authored or co-authored over 15 technical publications and holds 8 patents in his diverse fields of expertise.

He was the recipient of the ESSCIRC 1999 best paper award.

Dr. Guido Groeseneken received the M.Sc. degree in electrical engineering (1980) and the Ph.D degree in applied sciences (1986), both from the Katholieke Universiteit Leuven, Belgium. In 1987 he joined the R&D Laboratory of IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium, where he is responsible for research in reliability physics for deep submicron CMOS technologies. From October 2005 until April 2007 he was also responsible for the IMEC Post CMOS Nanotechnology program within IMEC’s core partner research program. Since 2001 he is Professor at the KU Leuven,where he is Program Director of the Master in Nanoscience and Nanotechnology, and where he is also coordinating a European Erasmus Mundus Master program in Nanoscience and nanotechnology. He became an IEEE Fellow in 2005 and an IMEC Fellow in 2007.

He has made contributions to the fields of non-volatile semiconductor memory devices and technology, reliability physics of VLSI-technology, hot carrier effects in MOSFET's, time-dependent dielectric breakdown of oxides, Negative-Bias-Temperature Instability effects, ESD-protection and –testing, plasma processing induced damage, electrical characterization of semiconductors and characterization and reliability of high k dielectrics. Recently he has also interest in nanotechnology for post-CMOS applications, such as carbon nanotubes for interconnect applications, tunnel FET’s for alternative nanowire devices etc.

He has served as a technical program committee member of several international scientific conferences, among which the IEEE International Electron Device Meeting (IEDM), the European Solid State Device Research Conference (ESSDERC), the International Reliability Physics Symposium (IRPS), the IEEE Semiconductor Interface Specialists Conference (SISC) and the EOS/ESD Symposium. From 2000 until 2002 he also acted as European Arrangements Chair of IEDM. In 2005 he was the General Chair of the Insulating Films on Semiconductor (INFOS) conference, organized in Leuven, Belgium.

He has authored or co-authored more than 500 publications in international scientific journals and in international conference proceedings, 6 book chapters and 10 patents in his fields of expertise.

Dr. Berthold Hahn received his PhD in physics from Regensburg University at 1998.

Dr. Hahn is responsible for chip R&D at OSRAM Opto Semiconductors for visible and infrared LEDs. He joined OSRAM Opto Semiconductors in 1998. He was responsible for the epi development of InGaN-based LEDs. He headed the ThinGaN programand took over responsibility for nitride-based high-power chip development. Since 2008 he has also been responsible for R&D of AlInGaP- and AlGaAs-based LEDs.

Dr. Tomás Palacios is an Associate Professor in the Department of Electrical Engineering and Computer Science at the Massachusetts Institute of Technology, where he leads the Advanced Semiconductor Materials and Devices Group. He received his Ph.D. in Electrical Engineering from the University of California - Santa Barbara, and a M.Sc. degree from the Polytechnical University of Madrid, Spain.

His research focuses on the development of new electronic devices to advance the fields of information technology, energy conversion and biosensors. He is especially interested in expanding the frequency performance of GaN transistors and developing new devices and circuits based on graphene.

His work has been recognized with multiple awards including, the 2010 Young Scientist Award of the International Symposium on Compound Semiconductors (ISCS), the 2009 NSF CAREER Award, the 2009 ONR Young Investigator Award, the 2008 DARPA Young Faculty Award, the 2006 UCSB Lancaster Award, the Young Researcher Award at the 6th International Conference on Nitride Semiconductors, the European Prize Salva i Campillo, and several best papers awards.

Prof. Palacios has authored more than 100 contributions on advanced semiconductor devices in international journals and conferences, 35 of them invited, 3 book chapters and 8 patents.